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IRF7604
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
-20
––– ––– V V GS = 0V, I D = -250μA
? V (BR)DSS / ? T J Breakdown Voltage Temp. Coefficient
–––
-0.022 –––
V/°C Reference to 25°C, I D = -1mA
?
31 ––– R G = 6.0 ?
R DS(ON)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
-0.70
2.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.090 V GS = -4.5V, I D = -2.4A ?
––– 0.13 V GS = -2.7V, I D = -1.2A ?
––– ––– V V DS = V GS , I D = -250μA
––– ––– S V DS = -10V, I D = -1.2A
––– -1.0 V DS = -16V, V GS = 0V
μA
––– -25 V DS = -16V, V GS = 0V, T J = 125°C
––– -100 V GS = -12V
nA
––– 100 V GS = 12V
13 20 I D = -2.4A
2.6 3.9 nC V DS = -16V
5.6 9.0 V GS = -4.5V, See Fig. 6 and 9 ?
17 ––– V DD = -10V
53 ––– I D = -2.4A
ns
38 ––– R D = 4.0 ?, See Fig. 10 ?
590 ––– V GS = 0V
330 ––– pF V DS = -15V
170 ––– ? = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
V SD
t rr
Q rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
–––
–––
–––
–––
41
38
-1.8
-19
-1.2
62
57
A
V
ns
nC
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T J = 25°C, I S = -2.4A, V GS = 0V ?
T J = 25°C, I F = -2.4A
di/dt = 100A/μs ?
G
D
S
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? I SD ≤ -2.4A, di/dt ≤ -96A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 150°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? Surface mounted on FR-4 board, t ≤ 10sec.
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